Growth of PrCo2 single crystals with a Boron Nitride crucible
نویسندگان
چکیده
منابع مشابه
Epitaxial growth of single-domain graphene on hexagonal boron nitride.
Hexagonal boron nitride (h-BN) has recently emerged as an excellent substrate for graphene nanodevices, owing to its atomically flat surface and its potential to engineer graphene's electronic structure. Thus far, graphene/h-BN heterostructures have been obtained only through a transfer process, which introduces structural uncertainties due to the random stacking between graphene and h-BN subst...
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The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs....
متن کاملSynthesis of aligned symmetrical multifaceted monolayer hexagonal boron nitride single crystals on resolidified copper.
Atomically smooth hexagonal boron nitride (h-BN) films are considered as a nearly ideal dielectric interface for two-dimensional (2D) heterostructure devices. Reported mono- to few-layer 2D h-BN films, however, are mostly small grain-sized, polycrystalline and randomly oriented. Here we report the growth of centimetre-sized atomically thin h-BN films composed of aligned domains on resolidified ...
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The accelerated crucible r9tation technique (ACRT) has been applied to the THM growth of Hg I _xCdxTe crystals to grow the crystals at a higher rate. These higher growth rates, which should be achieved by extending the regions of convectional stirring towards the interfaces, have been used in an attempt to explain the results in terms of simple constitutional supercooling arguments. Some differ...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2019
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.10.057